NXP targets GaN Transistors for Electronic Warfare
NXP Semiconductors has expanded its portfolio of broadband GaN RF power transistors for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000MHz.
The new GaN on SiC transistors are said to combine high power density, ruggedness, and very flat frequency response over wide bandwidths. All are input matched to optimise operating frequency range, and can withstand a VSWR greater than 20:1 with 3 dB overdrive without degradation. They are also part of NXP's Product Longevity Program.
The transistors' broadband frequency coverage from HF to S-band allows them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases amplifier size and bill of materials, according to the company.
The new transistors include:
MMRF5011N (28V) and MMRF5013N (50V): operate from 1 to 3000MHz with RF output power up to 12W CW, 15dB gain, and 60 percent efficiency, housed in an OM-270-8 over-molded plastic package.
MMRF5015NR5: operates from 1 to 2700 MHz with RF output power up to 125W CW, gain of 16dB, and efficiency of 64 percent, housed in an OM-270-2 over-molded plastic package
MMRF5019N: operates from 1 to 3000 MHz with RF output power up 25W CW, gain of 18 dB, and efficiency of 40 percent, housed in an OM-270-8 over-molded plastic package
MMRF5021H: operates from 1 to 2700 MHz with RF output power up to 250W CW, 16dB gain, and 58 percent efficiency, housed in a NI-780H-4L air-cavity ceramic package
MMRF5023N: operates from 1 to 2700 MHz with RF output power up to 63W CW, 16dB gain, and 60 percent efficiency, housed in an OM-270-2 over-molded plastic package
"Our customers want to reduce the size, weight, and power of military systems even at the device level," said Paul Hart, executive vice president and general manager of NXP's RF Power business unit. "Our new GaN transistors meet these requirements and can provide improved ruggedness, broad operating bandwidth and high efficiency."
