VisIC announces new GaN switch devices
VisIC has announced the availability of its new generation of ALL-Switch V22S65A (with an internal SiC diode) and V22N65A (without internal SiC diode).
According to the company, this new version of VisIC's ALL-Switch significantly reduces the Miller effect enabling readily available, standard drivers to be used in VisIC-based designs. These new devices also reduce the bill of materials required for specific applications.
Effective in hard switching topologies, the V22 series may be used for Zero Voltage Switching or Zero Current Switching topologies. It is claimed to have the lowest Rdson among either 650V GaN or SiC MOSFET transistors, and can achieve efficient power conversion with slew rate exceeding 100V/nS.
In addition, since the threshold voltage exceeds 5V, the devices work well in harsh EMI environments.
VisIC Technologies has demonstrated record performance of its Half Bridge demonstration board, achieving better than 99.3 percent peak efficiency at 200kHz in a hard-switched topology providing 2.5KW output.
