Loading...
News Article

Airbus awarded third contract for GaN satellite amplifiers

News
SSPAs deliver 50 to 100W with 15 percent more efficiency than previous models


Airbus Defence and Space has won its third contract in 18 months for its latest GaN SSPAs, bringing the total ordered to more than 350.

Investments leading to the development of the latest advanced GaN SSPA by Airbus Defence and Space was carried out as part of the European Space Agency's Advanced Research in Telecommunications Systems programme, which is supported by the UK Space Agency.

Designed for use in both communications and navigation satellites the innovative GaN based SSPAs are said to have superior performance and 50 percent less mass per Watt of RF output compared with previous generations of SSPA technology.

The flight L-band SSPAs deliver RF power of 50W to 100W and are 15 percent more efficient than previous models. In laboratory demonstrations, the latest GaN SSPAs have produced RF power in excess of 200W in L, S and C-bands.

Charlie Bloomfield, Airbus Defence and Space's head of communication products UK said:" These significant orders prove that the R&D investments we have made over the last few years are paying off, and that our latest GaN SSPA is a true world leader. Our experts are now looking at how we can further improve our design to give customers more power for less mass." 

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: