Rohm launches New 1700V SiC MOSFET
Rohm has announced a new 1700V SiC MOSFET for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.
The SCT2H12NZ provides the high breakdown voltage required for auxiliary power supplies in industrial equipment such as factory automation (robots), solar and industrial inverters, and manufacturing/testing devices.
Combining with AC/DC converter control IC designed for SiC MOSFET drive (BD7682FJ-LB) will make it possible to maximise performance and improve efficiency by up to 6 percent, says Rohm.
Compared to 1500V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides higher breakdown voltage (1700V) with eight times smaller ON resistance (1.15Ω). In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. Rohm is releasing a surface mount type (TO268-2L) that also provides adequate creepage distance.
Using this latest SiC MOSFET in combination with Rohm's AC/DC converter control IC (BD7682FJ-LB) designed specifically for SiC MOSFET drive will make it possible to maximise performance and increase efficiency by up to 6 percent. At the same time heat generation will be reduced, minimising thermal countermeasures and enabling the use of smaller components.
Rohm is launching evaluation boards and kits that make it possible to immediately begin evaluation and development. In addition to the BD7682FJ-LB-EVK-402, a gate drive board for evaluating Rohm's full SiC module along with a snubber module are offered.
