EpiGaN nominated for EU Innovation Prize
EpiGaN, a European supplier of commercial-grade 150mm- and 200mm- GaN-on-silicon epi-wafers for 600V HEMT power semiconductors, has been shortlisted for the EU Innovation Radar Prize 2016 in the category 'Industrial and Enabling Tech'.
The company is one of eleven European digital innovators participating in EU-funded projects such as Horizon 2020. Public voting for the winner is open through the month of August.
EpiGaN offers innovative GaN-on-silicon and GaN-on-SiC material solutions for next generation power efficient electronics, RF power and sensor devices and systems. GaN technology allows for energy loss savings, more compact and lighter power conversion systems, such as power supplies, and is also in demand for its superior performance in wireless communication.
The Innovation Radar has been established recently as a data-driven initiative by the EU Commission to identify high-potential European digital innovations and the key drivers behind them participating in its FP7, CIP, and Horizon 2020 projects.
The EU Innovation Radar supports and guides digital innovators in assessing and highlighting their innovative and economic potentials in the world market. EpiGaN was nominated because of its development of large diameters GaN-on-Si epiwafer that enable a new generation of power electronics with much higher conversion efficiencies.
EpiGaN is developing and manufacturing AlGaN/GaN structures on 200mm Si substrates at the 600V node to enable its customers to successfully position themselves in rapidly growing market segments, addressing the power switching market, including power supply, solar inverter, power supply for data centers, and next, for electric vehicles.
