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Monday 1st June 2015
Project CryoLaser produces record output for 940nm laser diodes
Friday 29th May 2015
JAC Capital to set up new business in Netherlands and take on 2,000 NXP employees
Friday 29th May 2015
成功践行致力于中国光伏市场并推出新产品
Thursday 28th May 2015
First Korean LED manufacturer to pass GM reliability tests
Thursday 28th May 2015
eGaN power transistors designed to raise the bar in power conversion performance
Thursday 28th May 2015
Showa Denko introduce Lastertec tool to mass production line
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Thursday 28th May 2015
Award winning MOCVD system increases industry presence steadily since launch in 2014
Wednesday 27th May 2015
GaN power transistor market accelerating quickly says CEO
Tuesday 26th May 2015
One of the world' s leading experts in compound semiconductors has been appointed to lead a new research laboratory at Cardiff University with the power to turn the city into a global hub for CS research and exploitation
Friday 22nd May 2015
Potential for faster, higher efficiency wireless power, RF, and communications devices
Friday 22nd May 2015
Low energy consumption and small size suit tactical military applications
Friday 22nd May 2015
Cadmium-free quantum dots 'preferred choice for human and environmental health'
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Thursday 21st May 2015
Is the transistor laser ready to deliver the blindingly fast broadband speeds industry craves, asks Compound Semiconductor.
Thursday 21st May 2015
Graphene on 2D hexagonal BN material offers new way to send and receive light
Thursday 21st May 2015
Nanocellulose infused with ZnSe quantum dots glows at room temperature
Thursday 21st May 2015
Settling time is hundred times faster than legacy GaAs RF switches
Thursday 21st May 2015
Input-matched GaN-on-SiC HEMTs can be optimised for power and efficiency within the band
Thursday 21st May 2015
1mm pitch allows additional and larger vias for higher current capability
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Wednesday 20th May 2015
UltraCMOS chip competes with multi-chip GaAs solutions across 1.8 to 2.2GHz
Wednesday 20th May 2015
27 to 30GHz GaN MMIC has output power of 36W and power added efficiency over 30 percent
Wednesday 20th May 2015
RFIC module enables SDARS to coexist with cellular, WiFi, Bluetooth and GPS
Wednesday 20th May 2015
Power switch with top side cooling suits high frequency, high efficiency power conversion
Wednesday 20th May 2015
First of a planned portfolio of GaN transistors for the cellular market
Wednesday 20th May 2015
GaN-on-silicon HEMT D-Mode device targets narrow and broadband use

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