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Monday 31st March 2014
The gallium arsenide device operates from DC to 20 GHz
Monday 31st March 2014
The LUXEON 3020 emitter crosses the 1,000 lumens per dollar threshold
Monday 31st March 2014
The gallium nitride on silicon power transistors can operate in harsh environmental conditions
Monday 31st March 2014
The III-nitride based module is claimed to have an efficiency of 200 lumens per Watt
Friday 28th March 2014
Combining an MBE grown GaAs/AlGaAs quantum cascade laser with a metamaterial opens up the possibility of integrating a light detector for terahertz radiation into a chip
Friday 28th March 2014
The company will display its Simply Perfect PAR and AR111 lamps next week at Light + Building
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Friday 28th March 2014
The LMH2 LED GaN module family enables the complete replacement of 150-watt ceramic metal halide lamps
Friday 28th March 2014
The company's III-nitride on SiC LED technology is continuing to push the boundaries of LED performance
Friday 28th March 2014
The firm's long-haul super-channel technology utilise indium phosphide PIC technology
Friday 28th March 2014
The 802.11ac wireless connectivity in the tab is enabled by Anadigics' indium gallium phosphide technology
Friday 28th March 2014
The tool can also be used for a variety of applications where a sputtered material stack in an unbroken vacuum chain is required
Thursday 27th March 2014
University researchers worked with gallium nitride because it is one of the most promising semiconductor materials for use in biomedical applicationsedical implantation
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Thursday 27th March 2014
The robust wireless business and diversification strategy drives strong rises in revenues, profit and earnings
Thursday 27th March 2014
The compact scale GaN-on-silicon package is claimed to reduce mounting area by 90 percent
Thursday 27th March 2014
all line-up of LED component solutions
Thursday 27th March 2014
Atomic Force Microscopy (AFM) is expanding rapidly into all venues including semiconductor characterisation
Wednesday 26th March 2014
The LED based module is designed as a replacement for the high pressure sodium lamp
Wednesday 26th March 2014
The firm's UV laser systems are suited for fabricating complex 2-D and 3-D structures such as micron-scale devices. Heat-free laser ablation facilitates exact tolerances without collateral damage to the material
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Wednesday 26th March 2014
The gallium nitride on silicon dotLED is 0.2mm in height and designed for applications that demand low profile electronic components
Wednesday 26th March 2014
The III-V multijunction cells will be used for the SNC global navigation satellite system
Wednesday 26th March 2014
The 1752 laser platform features 1.2 GHz operational bandwidth with low adiabatic chirp to maximise signal quality in short and long lengths of fibre
Wednesday 26th March 2014
Si-Ge-C superlattice films enable efficient light absorption and emission across an extended wavelength range, from UV to MWIR
Tuesday 25th March 2014
Superior thermal conductivity enables an output power hike for high-voltage LEDs
Tuesday 25th March 2014
The gallium nitride-on-silicon white LEDs are suited to general lighting applications. Mass production is expected to start at the end of March

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