Loading...
News Article

Transphorm and Silanna develop 65W USB-C GaN-based Design

News

GaN-based solution delivers 30W/in3 power density and 94.5 percent efficiency

GaN power specialist 
Transphorm and fellow California-based power chip maker Silanna Semiconductor have worked together to produce a GaN power adapter reference design.

The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller.

Together, the technologies yield peak efficiency of 94.5 percent with an uncased power density of 30W/in3. According to the companies, these performance levels outpace the currently available competing solutions using silicon superjunction MOSFETs or e-mode GaN transistors, and furthermore use a smaller GaN FET from Transphorm.

Silanna Semiconductor and Transphorm’s universal GaN adapter design is suitable for powering laptops, tablets, smartphones and other IoT devices.

The SuperGaN FET is Transphorm’s TP65H300G4LSG, a 650 V 240 mΩ device in an industry standard PQFN88 package. It is built on the SuperGaN Gen IV platform, which uses advanced epi and patented design technologies to improve performance.

Unlike e-mode devices, the GaN FET requires no protective external circuitry such as additional bias rails or level shifters —an advantage that produces higher efficiency. Collectively, these and other features further increase the adapter system’s overall power density and reduce BoM costs.

Silanna's SZ1130 is said to be the first fully-integrated ACF PWM controller that integrates an adaptive digital PWM controller, an Active Clamp FET, an Active Clamp Gate Driver, and a UHV Startup regulator.

As an ACF solution, it is said to deliver higher performance than competing quasi-resonant (QR) controllers and offers a simple design in the smallest PCB area among all ACF controllers in the market.

Tushar Dhayagude, VP field applications and technical sales, Transphorm said: “Our GaN FETs are known to improve efficiency, power dissipation and size of AC/DC chargers, particularly when compared to competitive e-mode GaN and integrated GaN IC solutions.”

Ahsan Zaman, director of marketing, Silanna said: “At Silanna Semiconductor, we are extremely excited to further advance the best-in-class efficiency and power density results by combining our knowledge and expertise with technology ecosystem partners to deliver some of the world’s most innovative products.”

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: