Info
Info
News search:

< Page of 578 >

News


Tuesday 21st December 2010
The company was honored by Connecticut's Greater Valley Chamber of Commerce for its solar HCPV technology and solar tracker systems.
Tuesday 21st December 2010
IMS Research’s latest quarterly GaN LED report says that oversupply is accelerating due to a significant reduction in the number of LEDs required per panel. The report also says that Samsung and LG are battling over LED consumption leadership for LCD displays.
Tuesday 21st December 2010
The Taiwan-funded mainland plant in Yangzhou currently accommodates 25 MOCVD reactors. The plant specializes in LED manufacturing for backlighting, consumer electronics and general lighting.
Tuesday 21st December 2010
The plant will produce energy-efficient, environmentally friendly LED lights. Construction is expected to begin early 2011 and take six months to complete.
Tuesday 21st December 2010
The Company intends to use the net proceeds from the offering for general corporate purposes, including working capital.
Monday 20th December 2010
Mitsubishi Electric Corporation announced today it will launch five new models of gallium arsenic (GaAs) power amplifiers to be used in personal computer (PC) data communication terminals for WCDMA1 cellular networks. Sales will begin on March 1, 2011 through Mitsubishi Electric sales sites worldwide.
Info
Monday 20th December 2010
AXT, a manufacturer of compound semiconductor substrates, today announced that the NASDAQ Stock Market has upgraded the listing of the Company's securities to the NASDAQ Global Select Market effective January 3, 2011. The Company's securities will continue to trade under the symbol "AXTI."
Monday 20th December 2010
GeneSiC Semiconductor, an innovator of novel Silicon Carbide devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration for a Phase I SBIR award.
Monday 20th December 2010
The firms were recognized by the Canadian Solar Industries Association for the 80 megawatt Sarnia solar project in Ontario. This is claimed to be the largest operating PV facility in the world.
Monday 20th December 2010
Currently serving as CEO and Director of GT Solar, the industry veteran has held senior positions in a number of different technology industries.
Friday 17th December 2010
The optoisolator designed for use in harsh environments incorporates a high-efficiency GaAIAs LED with a peak wavelength of 850nm
Friday 17th December 2010
The firm has shipped theTurboDisc K465i MOCVD reactor to an LED manufacturer in Asia.
Info
Friday 17th December 2010
The Strategy Analytics report forecasts the trend to continue for the foreseeable future.
Friday 17th December 2010
The Indian research institute has ordered the Compact21 MBE research system for ultra-thin film electronic structures.
Friday 17th December 2010
The firm focused on the design at the full system level to ensures that the CPV modules work most efficiently as part of the complete system.
Friday 17th December 2010
By enabling designers to use brighter, precisely-optimized LEDs for each particular application, Cree is helping lower costs and further simplifying and shortening the LED fixture design cycle.
Friday 17th December 2010
The firm’s ALT6713 and AWT6321 InGaP PAs help maximize performance for LG’s VL600 USB modem.
Thursday 16th December 2010
AIxtron will supply a double-digit number of AIX G5 HT 14x4-inch systems to manufacture GaN ultra-high brightness LEDs.
Info
Thursday 16th December 2010
TriQuint’s complete RF front-end modules which offer winning performance in power consumption and scalability will be used in Samsung’s 3G Galaxy Tab and flagship smartphone series, Galaxy S.
Thursday 16th December 2010
Osram’s latest LED provides an enormous increase in brightness and is anticipated be used in LED projectors as large as 2 meters in diameter.
Thursday 16th December 2010
The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
Thursday 16th December 2010
Each 150 mm wafer produces four times the number of LEDs as the current 3-inch wafers. The transition to a larger wafer size is critical to provide the increasing volume of LEDs required by the lighting industry and ensuring a supportable and secure supply chain.
Thursday 16th December 2010
The company has broadened its product line with the flexible SFX3 CIGS module up to 260W, which has recently achieved IEC 61646 and IEC 61730 certifications through TUV SUD America and the ETL Mark certification to the UL 1703 standard through Intertek.
Thursday 16th December 2010
The funds will help the CdTe solar manufacturer to expand capacity to meet growing demand for solar modules. Abound Solar has also raised an additional $110 million in equity financing.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info