IMS Research’s latest quarterly GaN LED report says that oversupply is accelerating due to a significant reduction in the number of LEDs required per panel. The report also says that Samsung and LG are battling over LED consumption leadership for LCD displays.
Mitsubishi Electric Corporation announced today it will launch five new models of gallium arsenic (GaAs) power amplifiers to be used in personal computer (PC) data communication terminals for WCDMA1 cellular networks. Sales will begin on March 1, 2011 through Mitsubishi Electric sales sites worldwide.
AXT, a manufacturer of compound semiconductor substrates, today announced that the NASDAQ Stock Market has upgraded the listing of the Company's securities to the NASDAQ Global Select Market effective January 3, 2011. The Company's securities will continue to trade under the symbol "AXTI."
GeneSiC Semiconductor, an innovator of novel Silicon Carbide devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration for a Phase I SBIR award.
The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
Each 150 mm wafer produces four times the number of LEDs as the current 3-inch wafers. The transition to a larger wafer size is critical to provide the increasing volume of LEDs required by the lighting industry and ensuring a supportable and secure supply chain.
The company has broadened its product line with the flexible SFX3 CIGS module up to 260W, which has recently achieved IEC 61646 and IEC 61730 certifications through TUV SUD America and the ETL Mark certification to the UL 1703 standard through Intertek.