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Wednesday 11th December 2019
Estonian researchers improve efficiency of solar cells from 6.6 percent to 8.7 percent
Tuesday 10th December 2019
Researchers at Tohoku University develop new contact-less probing technique using light
Tuesday 10th December 2019
An Asian research centre has ordered an MBE 412 to study high-frequency lasers
Tuesday 10th December 2019
PlayNitride prepares high-volume manufacturing of MicroLEDs with follow-up order of AIX G5+ C
Monday 9th December 2019
SMARTExpertise funding award marks ‘topping out’ of a new high-tech centre to be built on Cardiff campus
Monday 9th December 2019
Companies demo 400Gbps coherent transmission over a 50GHz fixed grid metro transport network with pre-existing 10G channels
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Monday 9th December 2019
Imec makes ultra-scaled FETs with 2D semiconductor channels
Friday 6th December 2019
More than 150 smartphone models feature Trumpf VCSEL technology
Friday 6th December 2019
Asian university has ordered two MBE Compact 21 machines to study electronic and optoelectronic devices
Thursday 5th December 2019
Company can make native Blue, Green and Red InGaN material or tune wavelengths from 400 - 650 nm using its GaN on silicon platform
Thursday 5th December 2019
Avancis and Smit Thermal Solutions team up with European research institutes HZB, CNRS and Solliance for higher efficiencies in CIGS
Wednesday 4th December 2019
THVPE method forms high-quality crystals at a faster growth rate with fewer dislocation defects
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Wednesday 4th December 2019
Company recognised for its supply of VCSELs and other components for datacom transceivers
Wednesday 4th December 2019
Asian industrial customer orders fourth MBE 6000 machine
Tuesday 3rd December 2019
GaAs will be a transition platform for active antenna components, predicts Yole, to be replaced by RF-SOI or SiGe
Tuesday 3rd December 2019
Korean team discover a carrier multiplication process in 2D semiconductors that could increase the efficiency of future solar cells
Tuesday 3rd December 2019
AIX G5+ Planetary MOCVD platform supports capacity RF device ramp-up for RF using 6 inch wafers
Monday 2nd December 2019
ST strengthens internal ecosystem, from materials expertise and process engineering to SiC-based MOSFET and diodes design and manufacturing
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Monday 2nd December 2019
Bob Stahlbush will discuss using ultraviolet photoluminescence (UVPL) imaging techniques to understand SiC device yield, performance and reliability
Monday 2nd December 2019
850 nm, 890 nm, and 940 nm devices offer radiant intensity to 13 mW/sr in tiny SMD package
Monday 2nd December 2019
Miniature ToF modules used in more than 150 different smartphones
Monday 2nd December 2019
Expansion increases capacity for E-band transceiver modules and mmWave device packaging and sub-assembly manufacturing
Monday 2nd December 2019
Optimised metallisation scheme with SiO2 current blocking layer could deliver cheaper and reliable next-generation solid-state lighting devices

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