+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

Samsung Galaxy Note powered by Anadigics' InGaP PAs

The firm is shipping production volumes of its indium gallium phosphide fourth generation HELP4 modules and dual-band third generation HELP3E power amplifiers to Samsung Electronics

The AWT6621 powers the Galaxy Note I9228 (TD-SCDMA) and the AWC6323, a dual band HELP3E power amplifier, is used in the Galaxy Note I889 (CDMA), both available in China.

The ALT6705, AWT6621, and AWT6624 are the company's fourth generation High-Efficiency-at-Low-Power (HELP4) power amplifiers (PAs) and power the Galaxy Note SHV-E160L available in Korea.

 

 

 

The Samsung Galaxy Note features an impressive 5.3 inch high-definition super AMOLED screen and is capable of displaying movies at full 1080p. What's more, the slim Galaxy Note provides an 8 megapixel camera, 1.4 GHz dual-core processor, and Android 2.3 Gingerbread operating system.

“The new Samsung Galaxy Note represents an advanced convergence device that merges the impressive multimedia features of a tablet with the versatility and functionality of a smartphone,” said Michael Canonico, senior vice president of worldwide sales at Anadigics.

“Anadigics’ power amplifiers continue to provide an RF advantage by helping to extend battery-life in power hungry multimedia-rich devices. We look forward to continue working closely with Samsung to help innovate and evolve the mobile user experience.”

Anadigics’ HELP4 and HELP3E PAs use the Company’s proprietary InGaP-Plus technology. They achieve optimal efficiency across low-range and mid-range output power levels and provide low quiescent currents. The ALT6705, AWT6621, AWT6624, and AWC6323 power amplifiers deliver efficiency to extend battery life in handsets, smart phones, tablets, netbooks, and notebooks.

The company's HELP4 PAs offer an average current consumption reduction of 30%, compared with previous generation PAs.

Both the HELP4 and HELP3E devices have three mode states to achieve exceptional power-added efficiencies at low-range and mid-range output power levels and a quiescent current of 4 mA or less.

Both families of devices are highly integrated and are claimed to have best-in-class linearity at maximum output power and both feature internal voltage regulation.

The HELP4 PAs have an integrated “daisy chainable” directional RF coupler with 20dB directivity.

The HELP3E modules have two independent PAs in a single package and an integrated RF coupler.

The HELP4 PAs come in a 3 mm by 3 mm package while the HELP3E PAs have a 3 mm by 5 mm footprint.

       

     
Connecting the Compound Semiconductor Industry

The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.

Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.

To discover our sponsorship and exhibition opportunities, contact us at:

Email: info@csinternational.net
Phone: +44 (0)24 7671 8970

To register your place as a delegate, visit: https://csinternational.net/register

Register
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: