Riber secures order for MBE 49 GaN system in Europe
French MBE company Riber has announced the sale of an MBE 49 GaN production system to a European manufacturer.
This European customer has invested in the MBE 49 system to enhance its capacity for producing advanced GaN components for next generation of high-brightness and low-energy displays.
The MBE 49 GaN system is specifically configured for plasma-assisted GaN epitaxy on 200mm silicon wafers, offering a cutting-edge solution for manufacturing AlGaN and InGaN devices.
Riber says its MBE technology stands out due to its lower growth temperature for high-indium-content InGaN, precise control over nanowire formation, minimal residual doping, and enhanced p-type doping capabilities - crucial factors in optimising technology performance.
The Riber MBE 49 system is fully automated and powered by the company's Crystal XE process control software. It integrates in-situ instrumentation tools that enable precise monitoring and control, ensuring high-quality epitaxial growth processes. This technology is fully compatible with 200mm silicon wafers.
This order will be delivered in 2025.
