News Article

EPC Announces Rad Hard 200V GaN FET


Low on-resistance device available for demanding space applications

EPC has introduced the EPC7007 radiation-hardened GaN FET; a 200V, 25 mΩ, 80A pulsed device in a small 5.76 mm2 footprint.

The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

Compared to rad-hard silicon devices with similar RDSon, the EPC7007 is said to offer 40 times smaller QG and QGD, zero reverse recovery (QRR). and the size is 40 times smaller. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions, says EPC.

Applications benefiting from the performance and fast deployment of the EPC7007 include DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.

“EPC's GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”. “The EPC7007 offers designers a solution with a figure of merit that is 50 times better than best-in-class silicon rad hard devices,” said Alex Lidow, CEO, and co-founder of EPC. “The EPC7007 extends the voltage range of our rad hard family to 200 V and provides designers with a solution that is significantly smaller and lower cost than silicon.

The EPC7007 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.

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