+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

EPC releases 150V and 200V GaN FETs


Devices offer higher performance and smaller size for DC-DC conversion, AC/DC SMPS, microinverters, and motor drives

Efficient Power Conversion (EPC) has introduced the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimisers and microinverters, and motor drives.

EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

These devices are said to be the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that is fifteen times smaller than alternative Si MOSFETs. In addition, QG, QGD, QOSS are more than three times smaller than Si MOSFETs and the reverse recovery charge (QRR), is zero.

These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications. The driver losses are said to be three times less than silicon solutions and ringing and overshoot are both significantly reduced.

For sinusoidal BLDC motor drives, these devices enable < 20 ns deadtime and higher frequency to reduce noise, minimise size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors, and increase motor + driver efficiency more than 8 percent by eliminating vibrations and distortions. This makes them suitable for forklift, escooter, eMobility, robots, and power tool motor drives.

For DC-DC conversion operating from 80 V – 20 V, the EPC2304 and EPC2305 enable higher switching frequency and up to five times higher density, and higher efficiency to simplify cooling.

These devices also provide higher efficiency, reduced size and weight, and robust reliability that are required for solar optimizers and microinverters.

The new devices are footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V, 3.8 mΩ EPC2306, and the 150V 4.9 mΩ EPC2308 for the maximum design flexibility.

Alex Lidow, EPC’s co-founder and CEO. said: “Designers can use this family of products for smaller and lighter weight BLDC motor drives, smaller and more efficient DC-DC converters, solar optimizers and microinverters, and higher power density USB chargers and power supplies. The footprint compatibility allows for optimization of performance and cost without redesigning the board.”

Development board

The EPC90140 development board is a half bridge featuring the EPC2304 GaN FET and the EPC90143 development board is a half bridge featuring the EPC2305 GaN FET. The purpose of these boards is to simplify the evaluation process and speed time to market. The 50.8 mm x 50.8 mm boards are designed for optimal switching performance and contain all critical components for easy evaluation.

The EPC2304 is priced at $5.25 each in 1 Ku volumes and the EPC2305 is priced at $4.95 each in 1 Ku volumes. The EPC90140 and EPC90143 development boards are priced at $200.00 each.

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: