Navitas to show next gen GaN and SiC at PCIM
Highlights will include highly integrated GaNFast power ICs and high-voltage GeneSiC SiC chips
Navitas Semiconductor will introduce and display an expanded portfolio of GaN and SiC power products at Europe’s PCIM 2023 conference in Nuremberg, Germany (9th to 11th May).
Highlights include GaNFast power ICs that integrate GaN power, sensing and control in a single device, and robust, high-voltage, high-efficiency GeneSiC SiC semiconductors optimised for reliable operation in harsh-environment, high-power designs.
“PCIM is a key event in the power-electronics calendar,” says, Alessandro Squeri, Navitas’ senior director for European sales. “Continuing our ‘Electrify our World’ mission, Navitas’ demonstrations, papers and panel discussions provide critical insight into how next-generation GaN and SiC deliver power-conversion and fast-charging solutions that could reduce global CO2 emissions by as much as six Gigatons per year by 2050.”
During this year’s conference Navitas will participate in a number of sessions. These include: GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications, by Alfred Hesener, senior director of industrial applications; GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter, by Tom Ribarich, senior director strategic marketing; and High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC, by Bin Li, senior applications manager.
Stephen Oliver, Navitas' VP corporate marketing & investor relations will participate in two panel sessions: Wide Bandgap Design with GaN HEMT and Vertical GaN , and Reliability and Quality Requirements for SiC and GaN Power Devices.
