Macom to manufacture HRL's GaN-on-SiC process
Macom Technology has entered into an agreement with HRL Laboratories to license and manufacture HRL’s proprietary 40nm T3L GaN-on-SiC process technology. HRL and Macom will work collaboratively on a rapid process transfer of this proprietary semiconductor process from HRL’s facility to one of Macom’s US Trusted Foundries.
HRL, jointly owned by Boeing and General Motors, is regarded as a pioneer in the R&D of innovative RF and microwave GaN-on-SiC process technologies. T3L uses a proprietary epitaxial structure and an advanced gate design, which contribute to its high performance and enhanced reliability at mmWave frequencies.
T3L was matured by HRL under the Office of the Undersecretary of Defense’s (OUSD) State-of-the-Art Radio Frequency Gallium Nitride (STARRY NITE) and DARPA's Dynamic Range Electronics and Materials (DREaM) programs, along with additional HRL funding that includes owner contributions.
“We’re pleased to partner with HRL and look forward to establishing a close working relationship. T3L is one of the most advanced high frequency semiconductor processes in the industry, which we anticipate will enhance our existing portfolio and accelerate execution of our roadmap,” said Stephen G. Daly, President and Chief Executive Officer, Macom. “We were not part of the STARRY NITE or DREaM programs; however, Macom and our customers will soon be the beneficiaries of the results, as we industrialize this technology.”
“This new relationship with Macom demonstrates HRL’s expertise at developing and proving technology concepts and then transitioning them into production,” said Rob Vasquez, president and CEO, HRL. “Our GaN-on-SiC process technologies were established over many years of diligent work, and we’re excited to now partner with Macom to advance the work into high volume production.”
