Navitas debuts 800V–6V board at NVIDIA GTC 2026
Navitas Semiconductor has announced its latest DC-DC power delivery board (PDB) enabling direct conversion from 800V to 6V in one power stage. The PDB is being shown at NVIDIA GTC 2026, March 16-19, San Jose, and also at the Navitas booth at APEC, March 22–26, in San Antonio, Texas.
The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Centre-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of the smallest passives and planar magnetics, delivering maximum power density.
Acording to Navitas, this solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays, maximising system efficiency, reliability, and valuable real estate, to deliver a simple power delivery solution to support advanced NVIDIA AI infrastructure.
NVIDIA is leading the transition to 800 VDC data centre power infrastructure, and Navitas is delivering the right technologies to support this shift. Navitas’s 800V–50V DC-DC platform introduction was a breakthrough in efficiency and power density; however, 800 V to 50 V conversion still required one more power conversion stage to deliver to Voltage Regulator Modules (VRM), which typically operated at 12 V or below.
As NVIDIA MGX architecture evolves with the future rack design for high compute and power density systems for greater AI performance, they will require direct 800 V-to-6 V (or 12 V) conversion to maximise rack power density and overall efficiency. Converting directly from 800 V eliminates the 50 V IBC stage, reducing conversion losses, freeing valuable board space, and improving end-to-end system efficiency. Navitas’s 6 V output architecture improves system performance versus other already released PDBs by cutting the VRM conversion ratio in half.
Navitas’s 800V–6V DC-DC PDB targets to deliver up to 96.5 percent peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20 percent thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximising transient performance and enhancing power distribution efficiency.
“By eliminating an entire conversion stage, we lower system cost and power losses while freeing up valuable board space, enabling customers to dedicate more real estate to compute, memory, and GPUs and to unlock maximum performance for AI workloads,” said Chris Allexandre, president and CEO of Navitas Semiconductor. “Our latest GaNFast based solution shows how Navitas is pushing the boundaries of AI data centre power.”
