CGD and NXP to collaborate on application solutions
Cambridge GaN Devices (CGD) is joining forces with NXP Semiconductors to accelerate time to market in data centre and automotive markets.
This new long-term collaboration will enable NXP to develop GaN-based system solutions, building on CGD’s GaN products, early access to next-generation CGD GaN developments, and the team’s expertise in GaN processes and technologies.
At the same time, CGD will benefit from access to NXP’s broad processor and analogue product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions.
Fabio Necco (pictured above), CEO, CGD said: “By working closely with NXP, we are accelerating the shift towards a new class of GaN-based power electronics. This collaboration is about leveraging GaN performance to increase efficiency, power density and reliability into real-world data centre and automotive systems, where performance, cost and sustainability now must go hand-in-hand.”
Chris Bretz VP, advanced power systems, NXP said: “CGD combines advanced GaN innovation with practical, scalable power solutions, delivering superior robustness, reliability, and system-level performance. With deep device expertise and strong know-how, CGD is an ideal long-term collaborator for NXP to accelerate high-efficiency GaN adoption across high-growth markets.”
Increasing power demands in data centres are particularly driven by AI. A single rack might have only consumed 40 kW in 2022 yet today can draw 200 kW or more and it is expected that a single rack will require 1 MW or more by 2030. CGD says ICeGaN is uniquely positioned to address these requirements enabling higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions.
In automotive traction inverters, GaN can improve efficiency at low load. CGD’s ICeGaN technology is the only single chip GaN-based technology running on a standard driver that enables paralleling of multiple devices to meet the high current requirements demanded by traction inverters.
