Infineon Technologies Announces Breakthrough 1300nm Vertical Cavity Surface-Emitting Lasers (VCSEL) for Optical Communications Applications
Source: Infineon Technologies
Munich/Germany. Infineon Technologies (FSE/NYSE: IFX), one of the world s leading providers of communications integrated circuits (ICs), announced today that it has achieved a breakthrough in 1300nm Vertical Cavity Surface-Emitting Laser (VCSEL) technology. Up to now, 1300nm lasers were available only in edge-emitting laser technology. 1300nm VCSELs extend the potential range of fiber optic systems, providing inherent cost, reliability, and power advantages compared to edge-emitting laser technology.
"Our Corporate Research Center developed the new 1300nm VCSEL technology, which is a key component for new datacom systems using either multimode and single-mode fiber," said Thomas Seifert, Senior Vice President and COO of Infineon s Communication Group. "This new technology will enable our customers to deliver first-to-market, maximum performance optical interconnect and long-haul transmission solutions."
The new 1300nm lasers can be modulated up to 10 GHz, providing the output power required for fiber optic transmission systems operating at OC-192 data rates (10 Gigabits per second). Designers can reduce their overall system complexity and system costs as well as improve system performance. Through new capabilities of the 1300nm technology, tightly spaced laser arrays can optimize port densities.
Laser device usage is regulated by government agencies to ensure eye safety. Because the human eye is 20 times less sensitive to longer wavelengths compared to 850nm wavelengths, 1300nm lasers may be operated at higher power levels. More power can be coupled into the fiber while staying within eye-safety limits, enabling transmission over a longer range.
Infineon utilized the company s long-standing expertise in molecular beam epitaxy technology and production of 850nm VCSEL components for developing the 1300nm technology. The vertically emitting laser is grown on a Gallium Arsenide (GaAs) substrate and has an active region consisting of multiple quantum wells of Indium Gallium Arsenide Nitride (InGaAsN). The mastery of this novel compound semiconductor was crucial for the new devices.
The new components emit light at a wavelength around 1300nm under continuous wave operation with a maximum output power above 1mW at room temperature. Laser action is achieved up to +80° C. The laser threshold current is about 2.0 mA at room temperature. Bit-error-free (BER
