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Wednesday 3rd September 2014
Company recognised for dedication to emerging technologies and VCSEL technology
Wednesday 3rd September 2014
Lumens-per-dollar ratio has increased by 24 percent over 12 months
Wednesday 3rd September 2014
Event to focus on practical advances in power electronics 
Tuesday 2nd September 2014
A larger Epistar able to meet rising LED demand in 2015
Tuesday 2nd September 2014
40nm target for first process design kit
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Tuesday 2nd September 2014
Proprietary process achieves superior Au, Ag, Cu and Ti etch performance in compound semiconductors
Monday 1st September 2014
Ultra smooth GaAs films deposited on Si using graphene buffers 
Monday 1st September 2014
Researchers show precise control of spin using inter-valley transitions
Monday 1st September 2014
Devices for PON, 10G, 100G applications and beyond 
Friday 29th August 2014
Device features efficiencies of up to 100 lumens per watt.
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Friday 29th August 2014
TrueWhite LED lamps use 83 percent less energy
Friday 29th August 2014
Researchers report control of photons with a 98.4 percent success rate
Thursday 28th August 2014
Composition-graded electron blocking layer boosts output power
Thursday 28th August 2014
InGaAs grown on a Si donor wafer uses III-V buffer layer
Thursday 28th August 2014
Tool to be used for GaN-on-Si PAs for mobile communication basestations
Thursday 28th August 2014
Use of 60GHz and 71-86GHz bands promises multi-Gbps data rates for backhaul and user access
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Wednesday 27th August 2014
Cree to own nearly 13 percent of Lextar as part of deal
Wednesday 27th August 2014
Combines flip chip and ReadyWhite technologies for white-chip solution
Wednesday 27th August 2014
Demonstration of ultrafast charge transfer in photo-excited 2D semiconductors
Wednesday 27th August 2014
Scalable technique would suit mass-production  
Tuesday 26th August 2014
HEMT delivers 63 percent drain efficiency with 50V operation over DC to 3.5GHz
Tuesday 26th August 2014
Solstice system goes to Washington Nanofabrication Facility

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