TNSC installs first gallium oxide MOCVD system
System installed and qualified for operation at Tokyo University of Agriculture and Technology
Taiyo Nippon Sanso Corporation (TNSC) has installed its first Ga2O3 MOCVD system in the laboratory of Yoshinao Kumagai at the Tokyo University of Agriculture and Technology.
β-gallium oxide (β-Ga2O3) is attracting attention as a semiconductor material for next-generation power (and energy efficient) devices. In October 2020, TNSC and Tokyo University of Agriculture and Technology started joint research on β-Ga2O3 thin film growth by MOCVD method, and in March 2021, announced the successful MOCVD growth of β-Ga2O3.
TNSC’s newly designed Ga2O3 MOCVD system (FR2000-OX) will make it possible to fabricate complex device structures and further stimulate research and development of these materials. The current process capability is for 2-inch wafers.
(Pictured above is the reactor chamber.)
