Fusion IP, the university IP commercialisation company that turns research into business, has announced that Seren Photonics, its LED technology company, has won a grant from the Technology Strategy Board, the UK’s national innovation agency, for R&D valued at £230k. The TSB Grant will be used to fund a project based on advanced nano-technology to further increase the amount of light created at the heart of a high brightness LED.
A*STAR Institute of Microelectronics and NXP Semiconductors have entered into research collaboration to develop a 200mm gallium nitride-on-silicon process and technology for high voltage power devices to deliver highly efficient energy solutions in end applications such as computing and communications, aerospace and automotive applications.
Kyma Technologies, a supplier of crystalline aluminum nitride and gallium nitride materials and related products and services, has announced the successful demonstration of a 10-inch diameter aluminum nitride on sapphire template.
The new production site of EpiGaN officially opened today in the presence of Flemish Minister Mrs Ingrid Lieten and Limburg Governor Mr Herman Reynders. The company selected the Research Campus Hasselt as the ideal location for the volume production of their gallium nitrid- on-silicon epitaxial material.
Cree, Inc. today announced that John Kurtzweil has resigned as executive vice president-finance and chief financial officer, effective May 21, 2012, to pursue other opportunities, and that Michael McDevitt has been appointed CFO on an interim basis.
The manufacturer of compound semiconductor substrates, which has recently suffered partly due to the weak gallium arsenide substrate market, will present its financial outlook in California, New York and Minnesota in May
Reusch will be creating benchmark power converter designs and assisting customers in the use of the company's proprietary gallium nitride FETs for high frequency, high performance power conversion systems