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Wednesday 6th June 2012
The innovator in MOCVD crystal growth technology which manufactures many compounds including silicon carbide for high-power electronic and microwave applications, has announced a new share repurchase program
Wednesday 6th June 2012
Solibro will benefit from network and investment, while allowing Hanergy access to its core CIGS solar cell technology
Wednesday 6th June 2012
The equipment manufacturer has been honoured for its chip making and wafer processing prowess, much of it used in the compound semiconductor industry
Wednesday 6th June 2012
The solar firm has broken into a new market. It intends to provide its CIGS modules in other chargers for other smart phones, including the latest Samsung Galaxy, very soon
Wednesday 6th June 2012
The three new reactors, suited to the growth of gallium nitride based LEDs, come in 2, 4, 6 and 8” wafer configurations
Wednesday 6th June 2012
The gallium arsenide based illuminator chips are suited for consumer electronic 3D sensor applications
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Tuesday 5th June 2012
The firm's concentrator triple-junction indium gallium arsenide compound solar cell has matched the conversion efficiency achieved by Solar Junction in 2011
Tuesday 5th June 2012
The wire technology, which was initially used to cut silicon carbide and gallium nitride, has been modified so that it can now be used to cut sapphire
Tuesday 5th June 2012
The company, which specialises in indium gallium nitride wafer and chip manufacturing, has ordered a 69 x 2-inch CCS reactor from the MOCVD equipment specialist
Tuesday 5th June 2012
The conferences, targeting LED manufacturing and future developments in the industry, including those in III-nitrides, will take place in the U.S. and China
Tuesday 5th June 2012
The two ventures will look at developing gallium arsenide imaging and sensing and gallium nitride-on-silicon power devices
Tuesday 5th June 2012
After much deliberation, optical module and component maker Opnext has decided that the merger with manufacturer of optical communications and laser products, Oclaro, should go ahead in Q3 2012
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Tuesday 5th June 2012
Due to its superior thermal and electrical properties, the power electronics industry is moving towards silicon carbide based devices. However, material defects in SiC, higher manufacturing costs and packaging issues could hamper growth. Gallium nitride is another contender in this market, but this material also suffers from similar problems
Tuesday 5th June 2012
Although there are another fifteen players in the MOCVD and MBE markets, they have had trouble establishing themselves due to the dominance of the other three firms
Monday 4th June 2012
The cash will be used to support the expansion of production and drive commercialisation of the firm's CIGS thin film solar technology
Monday 4th June 2012
Osram's new nitride based chip offers double the system brightness for embedded projection over previous versions, thanks to a new green LED component
Monday 4th June 2012
The market size of handset gallium arsenide based RF devices is predicted to balloon from its current $3.8 billion
Monday 4th June 2012
New silicon carbide technology should enable more accurate monitoring and safer control in high-temperature operations
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Monday 4th June 2012
The company was ranked 8th in the Boston Globe’s 2011 Listing of the best performing public companies in Massachusetts
Monday 4th June 2012
There is now a new fully-integrated solution for testing silicon, silicon carbide, gallium nitride and GaN-on-silicon power device wafers
Monday 4th June 2012
The firm's four new gallium nitride devices are suited to the X-Band and come in fully matched 50W or 100W packages
Thursday 31st May 2012
Joe Armstrong, Ph.D., Chief Technology Officer of Ascent Solar Technologies, has joined the Strategic Advisory Council of Bye Aerospace.
Thursday 31st May 2012
Nitride Solutions has been awarded a National Science Foundation (NSF) grant to commercialize its innovative manufacturing technology
Thursday 31st May 2012
RIBER, is announcing the sale of a MBE Compact21 research system in Japan.

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