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Thursday 7th January 2016
Ground-breaking Welsh innovation centre gets £10M a year until 2020
Thursday 7th January 2016
Electrically tunable wavelength with high power output could improve detection of hazardous chemicals
Wednesday 6th January 2016
Dual-junction GaInP /silicon cell reaches 29.8 percent conversion efficiency
Wednesday 6th January 2016
Former Seoul Semiconductor principal scientist Nathan Scott brings wealth of lighting experience to company
Tuesday 5th January 2016
Strategic partnership aims to develop cost effective, life-like quantum-dot UHD platform
Tuesday 5th January 2016
STMicroelectronics latest module is claimed to be the world's smallest
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Monday 4th January 2016
Site includes new MMICs and free signal chain optimising design calculators
Monday 4th January 2016
Wireless demand will continue to drive GaAs market despite silicon competition
Monday 4th January 2016
William J. Miller takes on responsibility for all of Veeco's business units and central R&D
Wednesday 30th December 2015
GaAs Labs matches $0.54 per share offer of competing bidder
Tuesday 29th December 2015
NIST, IBM researchers report new addition to toolkit of semiconductor 'self-assembly' methods
Tuesday 29th December 2015
New laser uses array of many small antenna-coupled laser cavities
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Tuesday 29th December 2015
Half-Bridge evaluation board simplifies GaN transistor testing
Thursday 24th December 2015
 3-by-6-mm chip packs two processor cores with more than 70 million transistors and 850 photonic components
Wednesday 23rd December 2015
Asian foundry orders precision surface processing solution
Wednesday 23rd December 2015
Maibom Innovation Centre chooses VIVID LED MR16-GU10 lamps with Violet-Emission 3-Phosphor technology
Tuesday 22nd December 2015
Four new 3.5GHz products support macro and small cell basestations
Tuesday 22nd December 2015
Taiwanese plant to increase from 2,500 tons to 3,500 tons a year
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Tuesday 22nd December 2015
New report shows GaN p-n diodes with near ideal performance
Monday 21st December 2015
Crystal IS, a leading developer of deep UV LEDs, is now ISO 9001:2008 certified. Crystal IS’s high-performance UVC LEDs is based on native Aluminum Nitride (AlN) substrates, Crystal IS’s award winning, proprietary technology. 
Friday 18th December 2015
Company invests in Monolith to capitalise on growing power semiconductor market
Thursday 17th December 2015
Company takes advantage of rise in demand for engineered substrates
Thursday 17th December 2015
Mobile and smart phone revenue shortfalls to be offset by non-wireless revenues

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