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Tuesday 29th December 2015
Half-Bridge evaluation board simplifies GaN transistor testing
Thursday 24th December 2015
 3-by-6-mm chip packs two processor cores with more than 70 million transistors and 850 photonic components
Wednesday 23rd December 2015
Asian foundry orders precision surface processing solution
Wednesday 23rd December 2015
Maibom Innovation Centre chooses VIVID LED MR16-GU10 lamps with Violet-Emission 3-Phosphor technology
Tuesday 22nd December 2015
Four new 3.5GHz products support macro and small cell basestations
Tuesday 22nd December 2015
Taiwanese plant to increase from 2,500 tons to 3,500 tons a year
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Tuesday 22nd December 2015
New report shows GaN p-n diodes with near ideal performance
Monday 21st December 2015
Crystal IS, a leading developer of deep UV LEDs, is now ISO 9001:2008 certified. Crystal IS’s high-performance UVC LEDs is based on native Aluminum Nitride (AlN) substrates, Crystal IS’s award winning, proprietary technology. 
Friday 18th December 2015
Company invests in Monolith to capitalise on growing power semiconductor market
Thursday 17th December 2015
Company takes advantage of rise in demand for engineered substrates
Thursday 17th December 2015
Mobile and smart phone revenue shortfalls to be offset by non-wireless revenues
Info
Thursday 17th December 2015
II-VI expands into integrated amplification for the rapidly‐growing CFP2‐ACO market
Wednesday 16th December 2015
Do the latest LDMOS and GaN RF power devices mark the end of the magnetron-based microwave, asks Compound Semiconductor?
Tuesday 15th December 2015
Strengthens M/A-COM’s Position in RF and Microwave Diodes
Tuesday 15th December 2015
Ampleon broaden portfolio with heavy GaN investment
Monday 14th December 2015
Achievements in Low Dispersion Buffers and High Current High-Threshold Voltage p-GaN Devices Presented at IEDM 2015
Monday 14th December 2015
MBE 412 system order for Germany and a 21 MBE machine to a leading laboratory in USA
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Monday 14th December 2015
Global Semiconductor Alliance award honours GaN Systems for industry impact
Friday 11th December 2015
Record performance gate-all-around InGaAs nanowire FETs and InGaAs TFETs presented at IEDM 2015
Friday 11th December 2015
1.6mm high infrared chip has angled direction of emission
Thursday 10th December 2015
US International Trade Commission still  to make decision on SiGen SOI complaint
Thursday 10th December 2015
Order for 50 AIX R6 systems cut to three
Thursday 10th December 2015
Cash acquisition unlocks sales channel in $500 million Japanese market

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