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EPC introduces 40V rad hard GaN FETs


62A and 250A devices address spaceborne and other high-rel applications

EPC has introduced two new 40 V rated radiation-hardened GaN FETs. EPC7001 is a 40V, 4 mΩ, 250A pulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40V, 14.5 mΩ, 62A pulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.

Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100 percent of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package. Packaged versions are available from EPC Space.

EPC says its eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. Advantages include devices that are smaller, have 40 times better electrical performance, and that cost less than rad hard silicon devices.EPC also says that these rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.

Applications benefiting from the these devices include DC-DC power converters, motor drives, lidar, deep probes, and ion thrusters for space applications. They are particularly well-suited for satellites operating in both Low Earth Orbit (LEO) and Geosynchronous Earth Orbit (GEO), as well as avionics systems.

“The Rad Hard product family provides unparalleled performance and reliability, coupled with significant space heritage for more efficient and robust systems covering a wide range of applications in harsh environments, such as space and other high reliability military applications”, said Alex Lidow, CEO, and co-founder of EPC.

The EPC7001 and EPC7002 are available for engineering sampling now.

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