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Thursday 21st April 2016
Eliminates need for external light source for mid-infrared silicon photonic devices or photonic circuits
Thursday 21st April 2016
Guide simplifies product selection power conversion systems
Thursday 21st April 2016
Swedish start-up confirms successful alignment and orientation of GaAs nanowires in a thin film
Thursday 21st April 2016
As Cobham joins forces with RFHIC to drive GaN radar forward, Compound Semiconductor learns this is only the beginning.
Thursday 21st April 2016
Future terabit super-channels made possible through 500 Gb/s photonic integrated circuits
Thursday 21st April 2016
Power-over-Ethernet lighting deployed across 40,000-square-feet in Digital Ceiling solution
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Wednesday 20th April 2016
Portfolio extends from 1.8 to 3.8 GHz to support LTE and LTE-A wireless-infrastructure market
Wednesday 20th April 2016
New schottky barrier diodes and half bridge module target high-speed switching and high power performance
Wednesday 20th April 2016
US firms Skyworks, Qorvo and Avago dominate the market
Tuesday 19th April 2016
New streetlights extend better light from driveways to highways
Tuesday 19th April 2016
Company to provide MIRPHAB partners and customers with volume source of mid infrared laser epitaxial wafers
Tuesday 19th April 2016
HD format detector gains traction amongst new and existing customers
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Tuesday 19th April 2016
Increasing demand for InSb and GaSb substrate materials
Tuesday 19th April 2016
Use has been boosted by falling prices in 2015, especially for 4-inch wafers, says IHS 
Monday 18th April 2016
Adds ultra-low power, short range wireless offerings to RF portfolio
Monday 18th April 2016
ORNL scientists grow high-quality layers of GaSe and MoSe2
Monday 18th April 2016
AIX G5+ C integrates Imec's proprietary materials technology to increase performance of GaN-on-Si-based power devices
Monday 18th April 2016
French-American start-up plans to 'obsolete expensive GaAs power amplifiers used in today's mobile phones'
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Monday 18th April 2016
Solmates to join 'Beyond CMOS' program to look at novel nanoelectronics device concepts
Friday 15th April 2016
850nm laser transmits 54Gbps over 2.2km of multimode fibre
Friday 15th April 2016
First midwave IR detector based on new 10-micron pitch industry standard has 1280 x 720 pixels
Thursday 14th April 2016
GaN Power ALL Switch  board demonstrates 98.5 percent power conversion efficiency at 200kHz
Thursday 14th April 2016
EPC's eGaN power transistors and ICs to be developed for space and harsh environments

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