News Article
Integra to Show latest GaN-on-SiC Transistor at EuMW
High power C-band transistor offers a minimum of 25W output power at 36V of drain bias
Integra Technologies a US developer of RF and microwave transistors and amplifiers will show its newly released high power GaN-on-SiC transistor IGT5259CW25 at this year's European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain.
Offering frequency coverage of 5.2 to 5.9 GHz, this device is suited to C-band CW radar applications. This transistor is fully-matched to 50-ohms, and offers a minimum of 25W of output power at 36V of drain bias.
Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra's new package PL44C2. Assembled via chip and wire technology, using gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Connecting the Compound Semiconductor Industry
The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register
The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register
