Lower Cost Transistors Debut from GaN Systems
New GaN transistors in standard 8×8 mm PDFN package feature lower on-resistance, increased robustness, and thermal performance
GaN System has introduced two new transistors packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications and the GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.
These new transistors feature lower on-resistance, increased robustness, and thermal performance, higher VDS(transient) rating, and an industry-standard form factor that eases customer adoption, scalability, and commercialisation.
The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor ideal for consumer electronics applications such as chargers and adapters, including higher power adapter designs that benefits from the transistor’s improved thermal performance. The GS-065-030-2-L is a 650 V, 30A, 50 mΩ bottom-side cooled transistor, which features the lowest RDS(on) in GaN Systems' PDFN product family. Lower RDS(on) means lower power loss and higher power rating, resulting in higher efficiency and power density. The GS-065-030-2-L GaN transistor is perfect for data center, industrial, and 5G applications such as telecom and server SMPS, motor drives, energy storage systems, and Bridgeless Totem Pole PFC solutions.
"GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made with every new generation of products so that customers can maximize the benefits of GaN. With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics," said Jim Witham, CEO at GaN Systems.
