Innoscience and Silanna launch AFC reference design
65W active clamp flyback design has 30 W/in3 power density
Chinese GaN firm Innoscience Technology and Silanna Semiconductor, a San Diego-based power company, have demonstrated a 65 W Active Clamp Flyback (AFC) reference design with 30 W/in3 uncased power density at the PCIM exhibition in Nuremberg, Germany. The design is said to achieve efficiency levels of greater than 94 percent at 230 Vac and has a no-load power consumption of less than 25 mW.
The design combines Innoscience's INN650D240A 650V GaN-on-silicon enhancement-mode power transistor with Silanna's SZ1131 Fully Integrated Active Clamp Flyback (ACF) controller.
The 65 W reference design measure 34 x 34.5 x30.5mm. It has an input voltage range of 90-265 VAC and offers USB-PD output voltages and current configurations of 5 V/3 A, 9 V/3 A, 15 V/3 A and 20 V/3.25 A. Innoscience and Silanna Semiconductor are also collaborating on higher power multi-port reference designs and will introduce them to the market soon.
Yi Sun, general manager, Innoscience America comments: "By enabling faster switching speeds, improved efficiencies and smaller components, the ACF topology addresses demands for improved performance and lower power consumption while minimising power supply size and weight. Silanna's integrated controller ICs and Innoscience's designer-friendly, robust and reliable GaN FETs are a perfect match, enabling this application."