+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

EVG achieves die-to-wafer fusion and hybrid bonding.

News

Successful full-system die-to-wafer transfer demonstrates important step forward in achieving process maturity

Wafer bonding and lithography specialist EVG has achieved a breakthrough in die-to-wafer (D2W) fusion and hybrid bonding.

It has successfully demonstrated 100-percent void-free bonding yield of multiple die of different sizes use from a complete 3D system-on-a-chip (SoC) in a single transfer process using EVG’s GEMINI FB automated hybrid bonding system.

Such an accomplishment had been a key challenge for D2W bonding until today, as well as a major hurdle to scaling down the cost of implementing heterogeneous integration. This important industry achievement was carried out at EVG’s Heterogeneous Integration Competence Center (HICC), which is designed to assist customers in leveraging EVG’s process solutions and expertise to accelerate the development of new and differentiating products and applications driven by advances in system integration and packaging.

Company executives will be available to discuss this D2W bonding breakthrough at SEMICON West, taking place this week at the Moscone Center in San Francisco, Calif., from July 12-14.

Applications such as artificial intelligence (AI), autonomous driving, augmented/virtual reality and 5G all require the development of high-bandwidth, high-performance and low-power-consumption devices without increasing production cost.

As a result, the semiconductor industry is turning to heterogeneous integration – the manufacturing, assembly and packaging of multiple different components or dies with different feature sizes and materials onto a single device or package -- in order to increase performance on new device generations. D2W hybrid bonding is a key manufacturing technology for heterogeneous integration. Yet, as the ever-higher bandwidth needs of these devices drive newer packaging technologies, new developments in D2W hybrid bonding and metrology are also needed.

“Hybrid bonding requires substantially different manufacturing technologies to standard packaging processes, bringing it much closer to front-end manufacturing - especially in terms of cleanliness, particle control, alignment and metrology precision,” stated Thomas Uhrmann, business development director at EV Group.

"Between our established GEMINI FB, which has been configured for collective D2W integration flows and serving the needs for D2W bonding for several years already, the EVG 320 D2W die preparation and activation system for direct placement D2W bonding, which provides a direct interface with D2W bonders, and the EVG 40 NT2 overlay metrology system, which uses AI, feed-forward and feedback loops to further increase hybrid bonding yields, EVG provides a complete end-to-end hybrid bonding solution to accelerate the deployment of 3D/heterogeneous integration.”

Since the interface in hybrid bonding is solid-state, with embedded metal pads to allow for face-to-face electrical connection of wafers and dies, D2W hybrid bonding requires similar tight cleanliness standards and manufacturing tolerances seen in front-end semiconductor manufacturing processes. This trend is also moving high-precision metrology into a more central role in controlling hybrid bonding alignment and process yield, which in turn is driving the integration of D2W bonding and metrology processes into one process line.

In addition, several different D2W hybrid bonding process flows are under evaluation today, each with unique advantages and requirements.

Since its establishment two years ago, EVG’s HICC has played a key role in helping customers and partners develop and optimise D2W hybrid bonding processes to address the unique needs of their given device design and application, taking into account various factors such as die size, die thickness, total stack height as well as interface considerations such as contact design and density. The HICC also features a state-of-the-art cleanroom with cleanliness standards on par with many leading-edge semiconductor fabs -- enabling EVG to uniquely support the stringent requirements for D2W and W2W hybrid bonding process development.

"The HICC has firmly established itself as a preeminent central open-access incubator for novel process solutions such as D2W hybrid and fusion bonding,” stated Markus Wimplinger, corporate technology development and IP director at EV Group.

CS International champions a green agenda
Wolfspeed selects Aixtron tools to support 200 mm production
Aixtron wins the prestigious German Innovation Award
Infineon provides Fox ESS with power semiconductors
TriEye and Vertilas demonstrate 1.3 μm VCSEL-driven SWIR sensing solutions
Polychromatic pixels
Infineon receives “GaN Strategic Partner of the Year” award
SweGaN announces strategic partnership with RFHIC
Q-Pixel debuts the world’s highest resolution (6800 PPI) color display
Aixtron receives Gold Supplier award
Coherent secures $15M CHIPS funding through CLAWS Hub
UK CSA Catapult celebrates success
Transforming displays with photo-responsive PeLEDs
US team reinvents the photoconductive switch
Filtronic enhances packaging capabilities
IQE posts full year 2023 results
CSA Catapult opens DER-funded packaging facility
What’s next for SiC?
Power electronics market to reach $69.7B by 2030
EPC announces GaN FET-based audio amp
Arizona State University to explore potential of AlN
Teledyne e2v HiRel announces GaN load switch
Aehr wins major order for SiC wafer test and burn-in system
Innoscience releases GaN driver IC
POET and MultiLane collaborate
III-V Epi reports a year of growth
VECSELS are a step towards the quantum Internet
Navitas to focus on grid reliability at PE International
SiC Innovation Alliance to drive industrial-scale R&D
Axcelis SiC ion implanters see success in Japan
Far-UVC kills 99% of airborne viruses in occupied room
SemiQ expands with new Taiwan office
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: