+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

ST to make SiC substrates in Sicily

News

First-of-a-kind SiC epitaxial substrate manufacturing facility in Europe

STMicroelectronics will build an integrated SiC substrate manufacturing facility in Italy to support the increasing demand from ST’s customers for SiC devices across automotive and industrial applications as they transition to electrification and seek higher efficiency. Production is expected to start in 2023, enabling a balanced supply of SiC substrate between internal and merchant supply.

The SiC substrate manufacturing facility, built at ST’s Catania site in Sicily alongside the existing SiC device manufacturing facility, will be a first of a kind in Europe for the production in volume of 150mm SiC epitaxial substrates, integrating all steps in the production flow. ST is committed to develop 200mm wafers in the next future.

This project is a key step in advancing ST’s vertical integration strategy for its SiC business. The investment of €730 million over five years will be supported financially by the State of Italy in the framework of the National Recovery and Resilience Plan and it will create around 700 direct additional jobs at full build-out.

ST’s high-volume STPOWER SiC products are currently manufactured in its fabs in Catania and Ang Mo Kio (Singapore). Assembly and test are done at back-end sites in Shenzhen (China) and Bouskoura (Morocco). The investment in this SiC substrate manufacturing facility builds on this expertise and is a significant milestone on ST’s path towards reaching 40 percent internal substrate sourcing by 2024.

“ST is transforming its global manufacturing operations, with additional capacity in 300mm manufacturing and a strong focus on wide bandgap semiconductors to support its $20+B revenue ambition. We are expanding our operations in Catania, the center of our power semiconductor expertise and where we already have integrated research, development and manufacturing of SiC with strong collaboration with Italian research entities, universities and suppliers” said Jean-Marc Chery, president and CEO of STMicroelectronics. “This new facility will be key to our vertical integration in SiC, reinforcing our SiC substrate supply as we further ramp up volumes to support our automotive and industrial customers in their shift to electrification and higher efficiency”.

Catania has long been an important site for innovation for ST as the home of the largest SiC R&D and manufacturing operations, successfully contributing to the development of new solutions for producing more and better SiC devices.

With an established eco-system on power electronics, including a long-term, successful collaboration between ST and different stakeholders (the University, the CNR -Italian National Research Council-, companies involved in equipment and product manufacturing) as well as a large network of suppliers, this investment will strengthen Catania’s role as a global competence centre for SiC technology and for further growth opportunities.

CS International champions a green agenda
Wolfspeed selects Aixtron tools to support 200 mm production
Aixtron wins the prestigious German Innovation Award
Infineon provides Fox ESS with power semiconductors
TriEye and Vertilas demonstrate 1.3 μm VCSEL-driven SWIR sensing solutions
Polychromatic pixels
Infineon receives “GaN Strategic Partner of the Year” award
SweGaN announces strategic partnership with RFHIC
Q-Pixel debuts the world’s highest resolution (6800 PPI) color display
Aixtron receives Gold Supplier award
Coherent secures $15M CHIPS funding through CLAWS Hub
UK CSA Catapult celebrates success
Transforming displays with photo-responsive PeLEDs
US team reinvents the photoconductive switch
Filtronic enhances packaging capabilities
IQE posts full year 2023 results
CSA Catapult opens DER-funded packaging facility
What’s next for SiC?
Power electronics market to reach $69.7B by 2030
EPC announces GaN FET-based audio amp
Arizona State University to explore potential of AlN
Teledyne e2v HiRel announces GaN load switch
Aehr wins major order for SiC wafer test and burn-in system
Innoscience releases GaN driver IC
POET and MultiLane collaborate
III-V Epi reports a year of growth
VECSELS are a step towards the quantum Internet
Navitas to focus on grid reliability at PE International
SiC Innovation Alliance to drive industrial-scale R&D
Axcelis SiC ion implanters see success in Japan
Far-UVC kills 99% of airborne viruses in occupied room
SemiQ expands with new Taiwan office
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: