News Article
Bookham challenges YAGs with diode laser
The latest product to come from the company's Swiss laser-making operation stakes its claim on an area of the spectrum not usually addressed by semiconductor lasers.
A new AlGaAs/InGaAs laser diode bar from Bookham, producing light at 1060 nm, will enter the market to compete with Nd:YAG lasers before the end of the year.
“We ll be looking at volume shipments in the third quarter of 2007, as there are key customers demanding an aggressive ramp on these products,” says senior product line manager Christian Naumer, based at the company s Zurich site.
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The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register
