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Toshiba's GaN plan targets 'PA Porsche' mantle

The Japanese company hopes high-power devices, such as the market-leading HEMT that it's bringing into production, will enable it to succeed in a tight RF GaN market.

by Andy Extance in Atlanta
The highest power GaN PA targeting the Ku-band frequency range, a 50 W HEMT from Toshiba, is now entering formal commercial production.

The Japanese conglomerate will also soon start distributing engineering samples of a 50 W GaN HEMT targeting the X-band, in the next stage of the company s transistor roadmap.

Speaking to compoundsemiconductor.net at the International Microwave Symposium in Atlanta on June 17, Toshiba said that high performance is the mainstay of its future RF technology plan.

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