Tankeblue banks on SiC wafer yields
Technology from the Chinese Academy of Sciences pushes rates of conversion from bulk crystals to substrates past 70 percent, lowering costs.
With over 10 years experience in crystal growth, much of Chen s work has been focused on the study of SiC defect formation.
Earlier in 2009, Chen and his colleagues published an analysis of the impact of temperature gradients on the formation of “misoriented domains” that he describes as killer defects.
He showed that by controlling temperature gradients in the PVT furnace used to produce the bulk SiC crystal and limiting growth rates, useful wafer yields could be much increased.