+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

Tankeblue banks on SiC wafer yields

Technology from the Chinese Academy of Sciences pushes rates of conversion from bulk crystals to substrates past 70 percent, lowering costs.

With over 10 years experience in crystal growth, much of Chen s work has been focused on the study of SiC defect formation.

Earlier in 2009, Chen and his colleagues published an analysis of the impact of temperature gradients on the formation of “misoriented domains” that he describes as killer defects.

He showed that by controlling temperature gradients in the PVT furnace used to produce the bulk SiC crystal and limiting growth rates, useful wafer yields could be much increased.

Penn State partnership to improve SiC
Fraunhofer inverter project boosts EV performance
Virtual Forest utilise Navitas’ high-power, efficient GaNSense half-bridge for agriculture
CS International champions a green agenda
Wolfspeed selects Aixtron tools to support 200 mm production
Aixtron wins the prestigious German Innovation Award
Infineon provides Fox ESS with power semiconductors
TriEye and Vertilas demonstrate 1.3 μm VCSEL-driven SWIR sensing solutions
Polychromatic pixels
Infineon receives “GaN Strategic Partner of the Year” award
SweGaN announces strategic partnership with RFHIC
Q-Pixel debuts the world’s highest resolution (6800 PPI) color display
Aixtron receives Gold Supplier award
Coherent secures $15M CHIPS funding through CLAWS Hub
UK CSA Catapult celebrates success
Transforming displays with photo-responsive PeLEDs
US team reinvents the photoconductive switch
Filtronic enhances packaging capabilities
IQE posts full year 2023 results
CSA Catapult opens DER-funded packaging facility
What’s next for SiC?
Power electronics market to reach $69.7B by 2030
EPC announces GaN FET-based audio amp
Arizona State University to explore potential of AlN
Teledyne e2v HiRel announces GaN load switch
Aehr wins major order for SiC wafer test and burn-in system
Innoscience releases GaN driver IC
POET and MultiLane collaborate
III-V Epi reports a year of growth
VECSELS are a step towards the quantum Internet
Navitas to focus on grid reliability at PE International
SiC Innovation Alliance to drive industrial-scale R&D
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: