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Semiconductor fabrication 'developed for future applications'

Toshiba has announced 20-nanometre scale generation developments for semiconductor fabrication.

Semiconductor fabrication has been improved after Toshiba Corporation announced it has developed the world s first 20-nanometre scale generation process technology - a high-resolution photoresist needed for the future application of extreme ultraviolet (EUV) lithography.

As wiring densities increase and semiconductor process technology advances, conventional base materials used for semiconductors - such as polymer photoresists - will have a number of challenges to overcome, including difficulties in achieving required resolutions, by the time 20-nanometre scale generation is in place, the organisation explained.

Photoresists are needed which can be used in both negative and positive-tone processes for semiconductor circuit patterning. Toshiba has developed a low molecular resist - a derivative of truxene - for EUV generation and applied it to negative tone process and has been able to form a test pattern in the 20-nanometre scale generation.

"Toshiba will further improve the performance of the molecular resist and apply it to the fabrication of 20-nanometre scale generation large scale integrations," the organisation noted.

NAND flash memory was invented by Toshiba, which is one of the largest semiconductor manufacturers in the world, the enterprise claimed.ADNFCR-2855-ID-19464242-ADNFCR
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