Dr. Philippe Roussel to present at CS Europe Conference 2012
Defining the next steps for the Compound Semiconductor Industry,Dr. Philippe Roussel of Yole Développement will present the talk "Wide Bandgap device market update”.
Following the success of CS Europe 2011, next year's conference is expanding to 2 days and offers a fantastic mix/quality of speakers making it the must attend industry event for 2012.
Register at www.cseurope.net & book your delegate place now as numbers will be limited. The conference takes place on 12th/13th March 2012 at Hilton Hotel, Frankfurt, Germany.
A networking dinner will also be held on the night of 12th March.
Dr Andrew W Nelson, President & CEO, IQE
Markets and III-V CMOS - Morning 12th March
A mix of insightful market research presentations & cutting-edge research destined to shape tomorrow's compound semiconductor industry with talks including:
Compound Semiconductor Markets: Current Status and Future Prospects - Asif Anwar, Director – Strategic Technologies Practice, Strategy Analytics
The Market for LEDs in Lighting- Mr. Philip Smallwood, Lighting Market Analyst, IMS Research
Wide Bandgap device marketupdate - Dr. Philippe ROUSSEL, Senior Project Manager, Yole Développement
European efforts to develop III-Vs on 200 and 300 mm silicon- Dr. Matty Caymax, Chief Scientist, Imec
An Overview of the DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program- Sanjay Raman, Program Manager, Defense Advanced Research Projects Agency/Microsystems Technology Office
The Integration of silicon CMOS with III-Vs- Professor Iain Thayne, University of Glasgow
III-Vs on 200 mm Si for VLSI– Dr Richard Hill, Project Manager, Sematech
III-V 3D Transistors- Peide Ye, Professor of Electrical and Computer Engineering, Purdue University
LEDs, lasers, PV and electronics - Afternoon of 12th March & full day of 13th March
KEYNOTE SPEAKER: III-V on Silicon: Challenges and Opportunities- Robert S. Chau, Intel Senior Fellow, Intel
SiC and GaN Electronics- Dr. John Palmour, Cree co-founder and chief technology officer Power & RF, Cree
Ammono's ammonothermal method to make GaN substrates– Dr. Robert Dwiliński, President, CEO, Ammonno S.A.
Tomorrow's RF chips for mobile devices- Todd Gillenwater, VP of Technology and Advanced Development, RFMD
Building a Successful III-V Pure Play Foundry- Dr. John Atherton, Associate Vice President, WIN Semiconductors
Scalable "on-silicon" solutions (GaN-on-Si and Ge-on-Si) using rare oxide buffer layers– Dr. Michael Lebby, General Manager & Chief Technology Officer, Translucent Inc.
III-Nitride Lasers Based on Nonpolar/Semipolar Substrates- Dr James W. Raring, VP Laser Engineering, Soraa Inc.
Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc.
Perspective of an LED Manufacturer- Professor Iain Black, VP WW Manufacturing Engineering, Technology & Innovation, Philips Lumileds Lighting Company
The CPV Market following the acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU, Senior Director
Commercialisation of GaN on SI based Power Devices at International Rectifier- Dr. Michael A. Briere, International Rectifier
GaN the enabler for true SDR- Professor Rik Jos, RF Technology Fellow & Innovation Manager, NXP Semiconductors
Holistic Approach to MOCVD vacuum & Abatement- Dr Mike Czerniak, Product Marketing Manager, EdwardsVacuum Ltd
Advances in Wide Bandgap Semiconductors for Power Electronics- Dr. Markus Behet, Global market manager, Power Electronics, Dow Corning
Large diameter GaN-on-Si epiwafers for power electronics- Dr Mariane Germain, Co-Founder & CEO, EpiGaN
Gallium nitride from both a product perspective and foundry -Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor
Damage - free Deposition on LED devices- Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd
Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr Thomas Uhrmann, Business Development Manager, EV Group (EVG)