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IQE secures £1 million InP laser contract

The firm has secured a contract to produce indium phosphide wafers for lasers in telecommunications
IQE received its first single order valued at more than £1 million for advanced laser wafers to enable a new generation of fibre-optic communications devices.

Although InP wafers are much more fragile and more expensive than GaAs substrates there are many benefits to this material

In the telecoms industry, they are invaluable.

For example, Infinera relies on its InP PIC technology to provide fast broadband communication throughout the world.

IQE's new order is to be delivered during the first half of 2013 with further significant follow-on orders expected, driven by strong demand in China for datacentre applications and infrastructure build out.

The wafers will be produced at IQE’s Cardiff manufacturing facility in its 100mm InP platforms.

Optical interconnects are on the brink of rapid growth driven by strongly increasing demand for “big data” applications across data centres, fibre-to-the-home (FTTH), backbone interconnection of 4G/LTE base stations and active optical cable (AOC) interconnects between computers and peripheral consumer electronic devices, to replace current copper USB2 cables.

Drew Nelson, President and CEO of IQE, says, “IQE has established a clear leadership position in the design and supply of advanced semiconductor wafers for a wide range of optoelectronic applications. This latest order for a new range of low-cost, high-performance optical fibre components marks a key milestone in the adoption of optical interconnects for a range of high volume applications.”
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