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EPC to highlight benefits of GaN over silicon

At the 2014 APEC power electronics industry conference, EPC will make presentations on GaN FET technology and applications showing the superiority of GaN transistors over silicon power MOSFETs
Efficient Power Conversion Corporation (EPC) will be presenting three application-focused technical presentations at APEC 2014.

Participants will learn about high frequency resonant converter, and high-frequency, hard-switched power converter design. The conference will be held in Fort Worth, Texas, from March 16th to the 20th.

The Applied Power Electronics event, APEC, focuses on the practical and applied aspects of the power electronics business. It is a conference for practicing power electronics professionals, addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment.

“We are honoured that the technical review committee of APEC 2014 has selected EPC experts to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” says Alex Lidow, EPC’s co-founder and CEO.

Technical presentations featuring GaN FETs by EPC experts include:

“Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC-DC Converters,” by David Reusch and Johan Strydom on Wednesday, March 19th from 8:30 a.m. to 10:00 a.m. (TO9-Wide Bandgap Devices in DC-DC Converters)

“GaN: Raising the Bar for Power Conversion Performance,” by David Reusch on Thursday, March 20th from 8:30 a.m. to 11:30 a.m. (IS2-4-3, Wide Band Gap Devices)

“Design and Evaluation of a 10 MHz Gallium Nitride Based 42 V DC-DC Converter,” by Johan Strydom and David Reusch on Thursday, March 20th from 2:00 p.m. to 5:30 p.m (T30-Semiconductor Devices, Track: Devices and Components)

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