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Brolis launches new range of mid-infrared gain chips

Ultra-broad gain and high-power devices target tunable spectroscopy

Brolis Semiconductors, a laser diode maker based in Vilnius, Lithuania, has introduced ultra-broad gain and high ouptut power single-angled-facet (SAF) gain chips for demanding tunable spectroscopy applications in the 1900nm to 2500nm range.

The new devices, which are based on Brolis' proprietary GaSb type-I technology, feature greater than 100nm/chip tunable single-mode emission with side-mode suppresion ration greater than 25dB and CW output power from 5 to 20mW.

These products come packaged in TO5 or C-mount package. Output beam direction is normal to the package output plane. 

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