Brolis launches new range of mid-infrared gain chips
Ultra-broad gain and high-power devices target tunable spectroscopy
Brolis Semiconductors, a laser diode maker based in Vilnius, Lithuania, has introduced ultra-broad gain and high ouptut power single-angled-facet (SAF) gain chips for demanding tunable spectroscopy applications in the 1900nm to 2500nm range.
The new devices, which are based on Brolis' proprietary GaSb type-I technology, feature greater than 100nm/chip tunable single-mode emission with side-mode suppresion ration greater than 25dB and CW output power from 5 to 20mW.
These products come packaged in TO5 or C-mount package. Output beam direction is normal to the package output plane.