OSI introduces 1550nm InGaAs avalanche photodiode
OSI Laser Diode has introduced the LAPD 3050, an InGaAs avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications.
The high speed 2.5GHz device has a 50 µm active area. It features low dark current, low back reflection, and comes in a miniature package. With spectral response from 1000 nm to 1650 nm at 25 degC, the typical operational wavelength is 1550 nm.
The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fibre pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers, and long haul applications. The breakdown voltage is from 50 V (min.) to 70 V (max.) and operating and storage temperatures range from -40 to 85degC.
