Infineon starts volume production of first full-SiC-module
Infineon is starting volume production for the EASY 1B, the first full-SiC module that was announced at last year's PCIM 2016. On the occasion of this year's PCIM in Nuremberg (16-18 May 2017), the company is showing additional module platforms and topologies for the 1200 V CoolSiC MOSFET family. Infineon says it is now able to bring the potential of SiC technology to a new level.
"SiC has reached a tipping point: Taking cost-benefit analysis into account, it is ready for use in a variety of applications," said Peter Wawer, division president Industrial Power Control from Infineon.
"In order to make the new semiconductor technology a revolution to rely on, however, it needs a partner like Infineon. Products tailored to the application, our own production capacities, comprehensive technology portfolio and system understanding: these four building blocks have made us the market leader for power semiconductors. We want and will also achieve this with our SiC product portfolio."
The new 1200 V SiC MOSFETs have been optimised to combine high reliability with performance. They show dynamic losses which are an order of magnitude lower than 1200 V silicon IGBTs. First products will initially support upcoming system challenges in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) and charging/storage systems.
The new configurations will also enable new solutions in industrial drives, medical technology or auxiliary power supplies in the railway sector in the near future, according to Infineon.
One major advantage of the trench technology with the 1200 V SiC MOSEFT lies in an extended robustness. This is due to the lower failure in time (FIT) rate and the short-circuit capability, which can be adapted to the respective application. Thanks to a threshold voltage (VÂ th) of 4 V and the recommended switch-on threshold (VGS) of +15 V, the transistors can be controlled like an IGBT and safely switched off in the event of a fault. The SiC MOSFETs enable very fast switching transients. In addition, Infineon's technology offers an easy adjustability of the transients via gate series resistors. The EMC behavior can thus be easily optimised.
Last year, Infineon announced the lead products EASY 1B (Half-Bridge / Booster) as well as the discrete TO-247-3pin and -4pin solutions. The EASY 1B platform is well established and an ideal module platform for fast switching devices. At this year's PCIM fair, Infineon will be exhibiting additional module platforms and topologies based on the 1200 V SiC MOSFET technology. This extends the performance spectrum of the CoolSiC MOSFETs step by step.
Among others, Infineon is showcasing the following SiC modules:
EASY 1B with B6 (Six-Pack) topology module has an on-resistance of only 45 mÎ©. An integrated body diode ensures a low-loss freewheeling function. The EASY 1B is suitable for applications in the fields of drives, solar or welding technology.
EASY 2B with Half-Bridge topology offers an enhanced performance with an on-resistance of 8 mÎ© per switch. The low-inductance module concept is Â suitable for applications with more than 50 kW and fast switching operations. These include solar inverters, quick-charging systems or solutions for uninterruptible power supplies.
62 mm with Half-Bridge topology features even higher power with on-resistance of 6 mÎ© per switching function. This module platform offers the possibility of low-inductance connection of systems in the medium power range. A great variety of applications make use of this, including medical technology or auxiliary power supplies in the railway sector, to name a few. Because of the large number of possible applications, Infineon anticipates a rapid spread of this module.
The lead products introduced at PCIM 2016, EASY 1B and the two discrete devices TO-247-3pin and -4pin, are gradually entering volume production during this year. The Half-Bridge configuration for the EASY 1B is now available. Its market launch is supported by various driver modules and demo boards, which are also available from now on. The new product configurations are available as samples, and the serial start is planned for 2018.