+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

Highly efficient AC to DC uses Transphorm GaN Fets

Power supply achieves over 96 percent efficiency using bridgeless totem-pole power factor correction
Transphorm, a maker of JEDEC-qualified 650V GaN semiconductors, has announced that Bel Power Solutions' high efficiency TET3000-12-069RA power supply marks another GaN industry milestone.

Bel Power's AC to DC front-end TET3000 uses a GaN-based bridgeless totem-pole power factor correction (PFC) topology to achieve greater than 96 percent efficiency.

Alain Chapuis, CTO, Bel Power Solutions said: "After considerable R&D weighing various semiconductor materials and power system designs, Transphorm's GaN within a totem-pole PFC configuration proved the most reliable, highest performing solution possible today. In turn, our customers gain access to a next generation power supply that stands to outperform incumbent solutions while delivering a greater ROI."

The TET3000 uses Transphorm's TPH3205WSB 49mΩ GaN FETs.

The TET3000 is a 3kW power supply designed for enterprise reliability server, router and network switching subsystems. Bel Power designed the supply with GaN to serve three critical customer needs: power density, size and performance reliability.

The TET3000's volume power density is 31.7W/in3. The device size is 2.72 x 1.59 x 21.85 inches, small enough to meet 1U end-system design requirements. Lastly, the TET3000 is certified for 80 Plus Titanium efficiency and earned a CE Mark per the European Commission's Low Voltage Directive, an initiative ensuring European citizen protection from electrical equipment.

GaN designs implementing the bridgeless totem-pole PFC topology achieve tkey system benefits when compared to a standard interleaved boost converter, according to Transphorm. Lower component count and EMI filter size, for example, means delivering the same power in a smaller footprint. Faster switching speeds lowers crossover losses and increases system efficiency. Removing the bridge rectifier decreases losses by 20 to 30 percent. GaN also enables increased performance and higher power density using twice the on-resistance as Si to help reduce system cost.

The power supply will be displayed during the Power Conversion and Intelligent Motion (PCIM) Europe conference as part of Transphorm's co-located showcase in the HY-LINE Power Components booth.

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: