Loading...
News Article

Sanan to Establish LED Production Base in Southeastern China

News

China based LED epiwafer & chip maker invests approximately USD $5bn to establish an LED production base in Quanzhou, southeastern China, reported Digitimes recently.

One of China's largest LED epi wafer and chip makers, Sanan Optoelectronics, is investing CNY 33.3bn (approximately USD $5bn) to establish an LED production base in Quanzhou, southeastern China.

Production will consist mainly of gallium nitride (GaN) substrates, epiwafers and chips, gallium arsenide (GaAs) epiwafers and chips, and high-power GaN lasers. All production lines are targeted to begin operation in five years and are expected to reach a high level of capacity utilization with target total annual revenue of CNY27bn in seven years.

Compared with active capacity expansion by fellow China-based manufacturers including HC SemiTek, Huaian Aucksun Optoelectronics Technology and Xiamen Changelight, Sanan expanded production capacity only slightly in 2017. The firm's latest investment plan is intended to maintain its leadership and competitiveness in the LED industry, industry observers say.

Sanan's net profit has risen from CNY691m for first-quarter 2017 to CNY1.515bn for second-quarter 2017 and CNY2.378bn for third-quarter 2017.

According to China-based Shenzhen Gaogong Industry Research (GGII), China's production value for LED chips will grow 30% year-on-year in 2017, with the five largest manufacturers collectively comprising more than 60% of the total value.


Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: