Loading...
News Article

EPC announces GaN-Based 48V to 12V dev Board

News

Board provides high-power density exceeding 1250W per cubic inch, and over 96 percent efficiency.

Efficient Power Conversion Corporation (EPC) has introduce the EPC9130 48 V − 12 V non-isolated, fully regulated development board. This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96 percent efficiency.

The EPC9130 development board has five phases, each using two 100 V EPC2045 eGaN FETs in a half-bridge configuration with a uPI Semiconductor, up1966A gate driver. The PWM signals to the gate drivers are fed by an onboard dsPIC33 microcontroller from Microchip. The board contains all critical components and layout for optimal switching performance "“ with a bill of materials of less than $0.06 per Watt in volume.

Emerging computing applications demand more power in much smaller form factors. In addition to the expanding needs of the server market, some of the most challenging applications are multi-user gaming systems, autonomous cars, artificial intelligence, and cryptocurrency mining. The EPC9130 significantly improves the power density while reducing the size and cost of the 48 V "“ 12 V DC-DC converters needed for these demanding applications.

"This DC-DC system has a power density greater than 1250 W/in3 , and an efficiency greater than 96 percent, both are records for this type of conversion. What really makes this solution compelling is that the cost of the components is less than $0.06 per watt, significantly lower than systems in production today," noted Alex Lidow, CEO and co-founder of EPC.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: