ON Semi extends SiC Diode family
650V Schottky diodes feature superior switching performance and higher reliability
ON Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650V SiC Schottky diodes. The diodes include surface mount and through hole packages ranging from 6A to 50A.
The new diodes are aimed at engineers designing PFC and boost converters for various applications including solar PV inverters, EV/HEV chargers, telecom power and data centre power supplies while facing challenges to deliver smaller footprints at higher efficiencies.
The 650 V devices offer the combined system benefits of higher efficiency, higher power density, smaller footprints and enhanced reliability. They are said to exhibit a reduced power loss due to the inherent low forward voltage (VF) and no reverse recovery charge of SiC diodes, and hence improved efficiency.
The faster recovery of SiC diodes allows for higher switching speeds and therefore reduces the size of magnetics and other passive components, enabling greater power density and smaller overall circuit designs.
In addition, the SiC diodes can withstand higher surge currents and deliver stability over their -55 to +175 degrees C operating temperature range.
ON Semiconductor's SiC Schottky diodes feature a patented termination structure that reinforces reliability and enhances stability and ruggedness. Additionally, the diodes offer higher avalanche energy, the industry's highest unclamped inductive switching (UIS) capability and lowest leakage currents.
