HexaTech Launches 2inch AlN line
Breakthrough in commercial AlN substrate capability
HexaTech has announced the launch of its 2inch diameter AlN substrate product line in conjunction with theInternational Conference on UV LED Technologies & Applications (ICULTA-2018) in Berlin, Germany.
"This achievement is the result of our intense, focused research and development activities, producing critical breakthroughs in AlN crystal growth performance," noted John Goehrke, HexaTech CEO. He added, "Together with strong support from our strategic partners, including Osram as announced last year, we have again raised the bar for AlN substrate technology."
Gregory Mills, VP of Business Development for HexaTech said:"This capability is the leading edge of a long-term, production-oriented product portfolio, which will enable our customers to quickly and easily transition deep-ultraviolet (UV-C) optoelectronic/electronic device development and production to an AlN substrate platform, delivering superior device performance coupled with cost-effective production scaling, process integration, and accelerated time to market."
"By challenging perceived constraints and aggressively pursuing solutions at each step of the crystal growth process, we have developed a significant shift in capability which breaks previously observed limitations. An outstanding team effort is responsible for this milestone, and sets the stage for both continued diameter expansion and increased process yields, ultimately rivaling the price:performance ratio of other mature compound semiconductor technologies, such as SiC and GaAs," stated Raoul Schlesser, HexaTech co-founder and VP of Crystal and Wafer Development.
