Navitas to Present Keynote at IEEE WiPDA Conference
Co-founder Dan Kinzer to present latest GaN advances at first ever WiPDA event in China
Navitas Semiconductor has announced that co-founder and CTO/COO Dan Kinzer will deliver a keynote address to share the latest GaNFast power IC technology developments at the first-ever IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Asia in Xi'an Shanxi, China.
"This inaugural WiPDA Asia conference brings a forum to China and the rest of Asia for the best minds in next-generation, wide-bandgap power semiconductor devices to share their advances. It is an excellent opportunity to show the device-level and system-level performance and robustness benefits of GaNFast power ICs," said Kinzer, "We are pleased to present these advancements that are enabling a new class of high-frequency, high-efficiency & high-density power systems."
The Navitas keynote, titled 'GaN Power IC Performance, Reliability and System Benefits', will be at 9am on May 19th at the Cullinan Huicheng Hotel, Xi'an. Kinzer will discuss GaN-integrated features such as drivers, voltage regulators, level shifters, bootstrap-charging, dV/dt control, with shoot-through and ESD protection.
These features not only protect the system but also cut frequency related losses so dramatically that they enable a 10x-20x increase in switching frequency with lower total losses. The resulting efficiency allows a new generation of high-density power converters to operate with minimum heatsinking and well-controlled case and external touch temperatures.
"China is a very strategic region for Navitas and for the power electronics industry," explained Charles Zha, Navitas senior director of China sales. "We are investing aggressively in China "“ last month we announced our first China sales office and applications lab in Shenzhen. This invited keynote at the first ever WiPDA event in China further reinforces the Navitas commitment to bring the world's most advanced power semiconductors to the region."
