Loading...
News Article

Custom MMIC to roll out ultra low noise amps at IMS 2018

News
Company says has broken the noise barrier in MMIC form with industry-first Ultra Low Noise Amplifier (ULNA) MMIC

Custom MMIC has announced that it will be discussing several new GaN and GaAs MMIC technology breakthroughs at the 2018 International Microwave Symposium (IMS) in Philadelphia, PA, June 12th through 14th.

The company says has broken the noise barrier in MMIC form with its industry-first Ultra Low Noise Amplifier (ULNA) MMIC. The CMD283C3 provides a 0.6 dB noise figure, outperforming all other LNA MMICs, and rivalling discrete component implementations. It operates over a frequency range of 2 GHz to 6 GHz (S & C-band) and has output IP3 of +26 dBm.

Four members of a new GaAs MMIC digital attenuator family are also being introduced. The CMD279 and CMD280 operate up to 30 GHz with 5-bit control. Attenuation range is up to 15.5 dB. Two, 2-bit attenuators, the DC-35 GHz CMD281 and DC-40 GHz CMD282, offer coarser control in 2 and 4 dB steps respectively. All four devices offer input IP3 of +42 dBm.

The latest Distributed Amplifier, the DC-20 GHz CMD249P5, offers a positive gain slope with nominal 12 dB gain. The GaAs device features output Psat of +30 dBm and output IP3 of +38 dBm.

Custom MMIC is also enhancing its line of low phase noise amplifiers (LPNAs). Responding to customer requests to assist in reducing unwanted phase noise and improve signal integrity and target acquisition in military radar systems, these LPNAs operate up to 40 GHz and offer low phase noise performance down to -165 dBc/Hz at 10 kHz offset. They serve as Local Oscillator (LO) drivers or receiver amplifiers in a variety of phased array radar, EW, military radio, instrumentation, and aerospace and space communication designs.

MMICs on the horizon from Custom MMIC include more ultra-low noise amplifiers and digital attenuators, as well as broadband distributed power amplifiers and GaN mixers. All these new MMICs are also being added to its 'space-qualifiable' list.

Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: