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Integra To Show New GaN/SiC Devices At IMS 2018

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Company's latest RF power transistors and modules target C-band and L-band systems

Integra Technologies will be showcasing several new GaN/SiC RF power devices at this year’s International Microwave Symposium in Philadelphia, PA, June 12th – 14th.

Among the new releases, IGNP0912L1KW is a 50Ω GaN/SiC, RF power module for L- band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000 W of peak pulse power, under the conditions of 2.5ms pulse width, and 20 percent duty cycle, while offering high thermal stability.

IGT5259L50 is a 50-ohm GaN/SiC transistor, offering 50W at 5 - 6 GHz for pulsed C-band radar applications.

IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500 W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5 dB gain, and 65 percent efficiency. This transistor is designed for long-pulse L-band radar applications.


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