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Integra To Show New GaN/SiC Devices At IMS 2018

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Company's latest RF power transistors and modules target C-band and L-band systems

Integra Technologies will be showcasing several new GaN/SiC RF power devices at this year's International Microwave Symposium in Philadelphia, PA, June 12th "“ 14th.

Among the new releases, IGNP0912L1KW is a 50Ω GaN/SiC, RF power module for L- band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000 W of peak pulse power, under the conditions of 2.5ms pulse width, and 20 percent duty cycle, while offering high thermal stability.

IGT5259L50 is a 50-ohm GaN/SiC transistor, offering 50W at 5 - 6 GHz for pulsed C-band radar applications.

IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500 W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5 dB gain, and 65 percent efficiency. This transistor is designed for long-pulse L-band radar applications.



CS International 26-27 March 2019, Sheraton Airport Hotel, Brussels

In its ninth year, CS International will continue to provide timely, comprehensive coverage of every important sector within the compound semiconductor industry. Presentations are split into 5 key themes and each industry key theme will be delivered by a keynote presentation from a leading industry figure as well as a market analyst presentation tailored to the theme. Together, the talks will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs. Attendees at the two-day conference will gain an up-to-date overview of the status of the CS industry, and have opportunities to meet many other key players within this community.

Places will be limited, so register your place today: https://cs-international.net

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